Orellana, WalterMenéndez-Proupin, EduardoFlores, Mauricio A.2021-09-152021-09-152019-12Scientific Reports Volume 9, Issue 11 December 2019 Article number 919420452322http://repositorio.unab.cl/xmlui/handle/ria/20268Indexación: ScopuDefect energetics, charge transition levels, and electronic band structures of several Cl-related complexes in CdTe are studied using density-functional theory calculations. We investigate substitutional chlorine (ClTe and ClCd) and complexes formed by ClTe with the cadmium vacancy (ClTe-VCd and 2ClTe-VCd) and the TeCd antisite (ClTe-TeCd). Our calculations show that none of the complexes studied induce deep levels in the CdTe band gap. Moreover, we find that ClTe-VCd and ClTe are the most stable Cl-related centers in n-type and p-type CdTe, under Te-rich growth conditions, showing shallow donor and acceptor properties, respectively. This result suggests that the experimentally-observed Fermi level pinning near midgap would be originated in self-compensation. We also find that the formation of the ClTe-TeCd complex passivates the deep level associated to the Te antisite in neutral charge state. © 2019, The Author(s).enCdznteCadmium TelluridesRadiation DetectorsArtículoAtribución 4.0 Internacional (CC BY 4.0)10.1038/s41598-019-45625-x