Modeling crack patterns by modified stit tessellations
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Fecha
2020
Autores
Profesor/a Guía
Facultad/escuela
Idioma
en
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Editor
Slovenian Society For Stereology And Quantitative Image Analysis
Nombre de Curso
Licencia CC
Attribution-NonCommercial 4.0 International (CC BY-NC 4.0)
Licencia CC
Resumen
Random planar tessellations are presented which are generated by subsequent division of their polygonal cells. The purpose is to develop parametric models for crack patterns appearing at length scales which can change by orders of magnitude in areas such as nanotechnology, materials science, soft matter, and geology. Using the STIT tessellation as a reference model and comparing with phenomena in real crack patterns, three modifications of STIT are suggested. For all these models a simulation tool, which also yields several statistics for the tessellation cells, is provided on the web. The software is freely available via a link given in the bibliography of this article. The present paper contains results of a simulation study indicating some essential features of the models. Finally, an example of a real fracture pattern is considered which is obtained using the deposition of a thin metallic film onto an elastomer material-the results of this are compared to the predictions of the model.
Notas
Indexación: Scopus.
Palabras clave
Fracture pattern, Geometry-statistics, Monte Carlo simulation, Random tessellation, STIT tessellation, Tessellation, Random Measure, Siméon Denis Poisson
Citación
Image Analysis and Stereology, Volume 39, Issue 1, Pages 33 - 46, 2020, Article number 2245
DOI
DOI: 10.5566/IAS.2245