Gating-induced large aqueous volumetric remodeling and aspartate tolerance in the voltage sensor domain of Shaker K+ channels

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dc.contributor.authorDíaz-Franulic, I.
dc.contributor.authorGonzález-Pérez, V.
dc.contributor.authorMoldenhauer, H.
dc.contributor.authorNavarro-Quezada, N.
dc.contributor.authorNaranjo, D.
dc.date.accessioned2019-12-06T15:59:09Z
dc.date.available2019-12-06T15:59:09Z
dc.date.issued2018-08
dc.descriptionIndexación: Scopus.es
dc.descriptionACKNOWLEDGMENTS. We thank Chris Lingle and Yu Zhou (Washington University) for critical reading of the manuscript and Victoria Prado for Xenopus care and oocyte preparation. We also thank Millennium Scientific Initiative P029-022-F. This work was supported by Fondecyt Postdoctoral Grants 3170599 (to I.D.-F.) and 3160321 (to H.M.).
dc.description.abstractNeurons encode electrical signals with critically tuned voltage-gated ion channels and enzymes. Dedicated voltage sensor domains (VSDs) in these membrane proteins activate coordinately with an unresolved structural change. Such change conveys the transmembrane translocation of four positively charged arginine side chains, the voltage-sensing residues (VSRs; R1–R4). Countercharges and lipid phosphohead groups likely stabilize these VSRs within the low-dielectric core of the protein. However, the role of hydration, a sign-independent charge stabilizer, remains unclear. We replaced all VSRs and their neighboring residues with negatively charged aspartates in a voltage-gated potassium channel. The ensuing mild functional effects indicate that hydration is also important in VSR stabilization. The voltage dependency of the VSR aspartate variants approached the expected arithmetic summation of charges at VSR positions, as if negative and positive side chains faced similar pathways. In contrast, aspartates introduced between R2 and R3 did not affect voltage dependence as if the side chains moved outside the electric field or together with it, undergoing a large displacement and volumetric remodeling. Accordingly, VSR performed osmotic work at both internal and external aqueous interfaces. Individual VSR contributions to volumetric works approached arithmetical additivity but were largely dissimilar. While R1 and R4 displaced small volumes, R2 and R3 volumetric works were massive and vectorially opposed, favoring large aqueous remodeling during VSD activation. These diverse volumetric works are, at least for R2 and R3, not compatible with VSR translocation across a unique stationary charge transfer center. Instead, VSRs may follow separated pathways across a fluctuating low-dielectric septum. © National Academy of Sciences. All rights reserved.es
dc.description.urihttps://www.pnas.org/content/115/32/8203
dc.identifier.citationProceedings of the National Academy of Sciences of the United States of America, 115(32), pp. 8203-8208.es
dc.identifier.issn0027-8424
dc.identifier.otherDOI: 10.1073/pnas.1806578115
dc.identifier.urihttp://repositorio.unab.cl/xmlui/handle/ria/11260
dc.language.isoenes
dc.publisherNational Academy of Scienceses
dc.subjectCharge hydrationes
dc.subjectConformational changees
dc.subjectOsmotic workes
dc.subjectShakeres
dc.subjectVoltage sensores
dc.titleGating-induced large aqueous volumetric remodeling and aspartate tolerance in the voltage sensor domain of Shaker K+ channelses
dc.typeArtículoes
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