Self-compensation in chlorine-doped CdTe

dc.contributor.authorOrellana, Walter
dc.contributor.authorMenéndez-Proupin, Eduardo
dc.contributor.authorFlores, Mauricio A.
dc.date.accessioned2021-09-15T13:14:33Z
dc.date.available2021-09-15T13:14:33Z
dc.date.issued2019-12
dc.descriptionIndexación: Scopues
dc.description.abstractDefect energetics, charge transition levels, and electronic band structures of several Cl-related complexes in CdTe are studied using density-functional theory calculations. We investigate substitutional chlorine (ClTe and ClCd) and complexes formed by ClTe with the cadmium vacancy (ClTe-VCd and 2ClTe-VCd) and the TeCd antisite (ClTe-TeCd). Our calculations show that none of the complexes studied induce deep levels in the CdTe band gap. Moreover, we find that ClTe-VCd and ClTe are the most stable Cl-related centers in n-type and p-type CdTe, under Te-rich growth conditions, showing shallow donor and acceptor properties, respectively. This result suggests that the experimentally-observed Fermi level pinning near midgap would be originated in self-compensation. We also find that the formation of the ClTe-TeCd complex passivates the deep level associated to the Te antisite in neutral charge state. © 2019, The Author(s).es
dc.description.urihttps://www-nature-com.recursosbiblioteca.unab.cl/articles/s41598-019-45625-x
dc.identifier.citationScientific Reports Volume 9, Issue 11 December 2019 Article number 9194es
dc.identifier.doi10.1038/s41598-019-45625-x
dc.identifier.issn20452322
dc.identifier.urihttp://repositorio.unab.cl/xmlui/handle/ria/20268
dc.language.isoenes
dc.publisherNature Publishing Groupes
dc.rights.licenseAtribución 4.0 Internacional (CC BY 4.0)
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/deed.es
dc.subjectCdzntees
dc.subjectCadmium Tellurideses
dc.subjectRadiation Detectorses
dc.titleSelf-compensation in chlorine-doped CdTees
dc.typeArtículoes
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